High-frequency power amplifier

Details High-frequency power amplifier High-frequency power amplifier

2006-04-18

2006-04-18

Mottola, Steven J. (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

C330S307000

Reexamination Certificate

active

07030698

ABSTRACT:
In a high-frequency power amplifier, gate feed portions are formed by dividing a gate feed which connects transistor gate electrodes in parallel, and each of the gate feed portions includes a given number of gate electrodes connected in parallel. Each of transistor cell elements includes a set of the gate electrodes connected in parallel. A resistance wire is interposed between the transistor cell elements to isolate each transistor cell element. The resistance wire and the gate electrodes are made of the same metal material and formed by the same process. Thus, closed loop oscillation of transistors is suppressed with no increase in chip size.

REFERENCES:
patent: 5111157 (1992-05-01), Komiak
patent: 5659267 (1997-08-01), Buer et al.
patent: 5805023 (1998-09-01), Fukuden
patent: 63-127575 (1988-05-01), None
patent: 2-110943 (1990-04-01), None
patent: 06-069737 (1994-03-01), None
patent: 8-130419 (1996-05-01), None
patent: 2001-274415 (2001-10-01), None
Walker, John L..B.; “High-Power GaAs FET Amplifiers”,Artech House, Inc., pp. 87-93, (1993).

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