Amplifiers – With semiconductor amplifying device – Including temperature compensation means
Patent
1998-12-23
2000-12-12
Lee, Benny
Amplifiers
With semiconductor amplifying device
Including temperature compensation means
330277, 330 68, H03F 304
Patent
active
061604534
ABSTRACT:
A high-frequency power amplifier has a high-frequency input, a high-frequency output and at least one power transistor connected therebetween. The power transistor has a first electrode serving as a control input, a cooling terminal connected to a second electrode and a third electrode. The third electrode is connected to a high-frequency reference potential conductor and the high-frequency reference potential conductor is connected in terms of high-frequency to the second electrode. An input signal applied to the high-frequency input is coupled out as an output signal at the high-frequency output.
REFERENCES:
patent: 5828551 (1998-10-01), Hoshino et al.
patent: 5892279 (1999-04-01), Nguyen
patent: 5925901 (1999-07-01), Tsutsui
patent: 5940271 (1999-08-01), Mertol
patent: 5986885 (1999-11-01), Wyland
Feld Peter
Kroeckel Horst
Vester Markus
Choe Henry
Lee Benny
Siemens Aktiengesellschaft
LandOfFree
High-frequency power amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-frequency power amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency power amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-221671