High frequency power amplification electric part and...

Details High frequency power amplification electric part and... High frequency power amplification electric part and...

2006-06-20

2006-06-20

Nguyen, Khanh Van (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including gain control means

C330S129000, C330S133000

Reexamination Certificate

active

07064612

ABSTRACT:
The present invention provides a high frequency power amplification circuit capable of preventing an output power and current consumption from being largely changed even when a load fluctuates in a wireless communication system for detecting an output level necessary for feedback control by a current detecting method. In a high frequency power amplification circuit as a component of a wireless communication system which detects an output level necessary for feedback control by a current detecting method, a capacitive element is interposed between the drain terminal of a power amplification transistor in the final stage and the gate terminal of a transistor constructing a current mirror circuit in a circuit for detecting an output level, and a change in an output power accompanying load fluctuation is reflected in a detection current of the output level detecting circuit.

REFERENCES:
patent: 6172567 (2001-01-01), Ueno et al.
patent: 6492872 (2002-12-01), Fujioka et al.
patent: 6605999 (2003-08-01), Matsushita et al.
patent: 2001/0040481 (2001-11-01), Ueno et al.
patent: 2000-523757 (1999-10-01), None
patent: 2000-151310 (2000-05-01), None
patent: WO99/29037 (1999-10-01), None
“Basis of Microwave and Its Application”, Sogo Electrics Press, Jun. 10, 1995, pp. 185-198.
“Electronic Material”, Institute for Industrial Research, Apr. 1999, pp. 91-95.

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