High frequency photo detector and method for the manufacture the

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357 32, 357 49, 357 52, 357 59, 357 68, H01L 2714

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active

049610970

ABSTRACT:
An improved photo detector is provided by forming a tub of monocrystalline semiconductor material surrounded by a layer of monocrystalline material of opposite conductivity type. The improved structure is manufactured by means of a modified DIC process. The device may by made deep enough to absorb a large portion of the incident radiation near the PN junction without sacrificing a large number of photo-generated carriers to recombination.

REFERENCES:
patent: 4579625 (1986-04-01), Tabata et al.

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