Patent
1985-03-11
1990-10-02
Wojciechowicz, E.
357 32, 357 49, 357 52, 357 59, 357 68, H01L 2714
Patent
active
049610970
ABSTRACT:
An improved photo detector is provided by forming a tub of monocrystalline semiconductor material surrounded by a layer of monocrystalline material of opposite conductivity type. The improved structure is manufactured by means of a modified DIC process. The device may by made deep enough to absorb a large portion of the incident radiation near the PN junction without sacrificing a large number of photo-generated carriers to recombination.
REFERENCES:
patent: 4579625 (1986-04-01), Tabata et al.
Heminger David M.
Law Waisiu
Onodera George C.
Pirastehfar Hassan
Handy Robert M.
Motorola Inc.
Wojciechowicz E.
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