High-frequency package

Details High-frequency package High-frequency package

2005-08-30

2005-08-30

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257S700000, C257S531000

Reexamination Certificate

active

06936921

ABSTRACT:
A high-frequency package comprises a dielectric substrate, on an upper face of which a mounting portion of a high-frequency circuit component is formed, a first line conductor formed on the upper face for transmitting high-frequency signals, a first coplanar grounding conductor, a second line conductor formed on a lower face, a second coplanar grounding conductor, a through conductor formed inside for connecting the first and second line conductors, a grounding through conductor connecting the first and second coplanar grounding conductors, a metal terminal bonded to the second line conductor, and grounding metal terminals bonded to the second coplanar grounding conductor, wherein a gap between the grounding metal terminals is equal to or less than ½ of a wavelength of high-frequency signals.

REFERENCES:
patent: 5903239 (1999-05-01), Takahashi et al.
patent: 6800936 (2004-10-01), Kosemura et al.
patent: 6847275 (2005-01-01), Sayanagi et al.
patent: 2605502 (1997-02-01), None

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