High-frequency oscillator having a field-effect transistor with

Details High-frequency oscillator having a field-effect transistor with High-frequency oscillator having a field-effect transistor with

1991-11-15

1992-11-17

Pascal, Robert J.

Oscillators

With distributed parameter resonator

Parallel wire type

331117D, 331117FE, H03B 500

Patent

active

051646862

ABSTRACT:
This invention is a high-frequency oscillator including a MESFET, wherein a GaAs MESFET, in which the doping profile of an active layer has a pulse-doped structure, is used as the MESFET. Since the GaAs MESFET is formed to have the pulse-doped structure, the change in transconductance with respect to the change in gate resistance remains constant at gate voltages within a predetermined range. When the gate voltage is set to be a voltage within this predetermined range, a capacitance change with respect to a gate voltage across a gate and a source is reduced. FM noise proportional to the magnitude of this capacitance change is reduced. Accurate information transmission is not interfered with unlike in conventional arrangements.

REFERENCES:
patent: 4707669 (1987-11-01), Mekata et al.

Affiliated with

Also associated with

Rating

High-frequency oscillator having a field-effect transistor with does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-frequency oscillator having a field-effect transistor with , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency oscillator having a field-effect transistor with will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1174427