Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2005-06-21
2005-06-21
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257S604000, C438S218000, C438S294000, C438S353000
Reexamination Certificate
active
06909163
ABSTRACT:
A high frequency oscillator for an integrated semiconductor circuit is a component of the semiconductor circuit, which is comprised of a first silicon layer, an adjoining silicon dioxide layer (insulation layer), and an additional subsequent silicon layer (structured layer), (SOI wafer), wherein the high frequency oscillator is comprised of a resonator with a metallized cylinder made of silicon disposed in the structured layer and a coupling disk that overlaps the cylinder in the vicinity of the layer, and an IMPATT diode that is connected to the cylinder of the resonator via a recess in the coupling disk.
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Hasch Juergen
Pfizenmaier Heinz
Lee Hsien-Ming
Robert & Bosch GmbH
Striker Michael J.
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