High frequency oscillator comprising cointegrated thin film reso

Oscillators – Solid state active element oscillator – Transistors

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331116R, 331158, 310314, 310324, 357 51, H03B 536

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active

050756419

ABSTRACT:
A cointegrated high frequency oscillator including a thin film resonator and active devices formed on the same semiconductor substrate and by a process which is compatible with formation of both the thin film resonator and the active devices. The processes utilized in formation of the thin film resonator are adapted to microelectronic processing techniques such that the steps of formation of the active devices and the thin film resonator can be intermixed to the degree necessary to allow, for example, the metallization layers to serve as elements both of the active devices and the thin film resonator.

REFERENCES:
patent: 4456850 (1984-06-01), Inoue et al.
patent: 4816778 (1989-03-01), Weber
patent: 4988957 (1991-01-01), Thompson et al.
Burns et al., "Design, Analysis, and Performance of UHF Oscillators Using Thin-Film Resonator-Based Devices as the Feedback Element", IEEE Midwest Symposium on Circuits and Systems, Aug. 1989.
Burkland et al., "A Thin-Film Bulk Acoustic-Wave Resonator-Controlled Oscillator on Silicon", IEEE Electron Device Letters, vol. EDL-8, No. 11, Nov. 1987.
Burns et al., "UHF Oscillator Performance Using Thin-Film Resonator Based Topologies", 41st Annual Frequency Control Symposium, 1987, pp. 382-387, (Mar. 1987).
Burns et al., "Design and Performance of Oscillators Using Semiconductor Delay Lines", 1987 Ultrasonics Symposium, pp. 369-373, (Jul. 1987).
Katyl, "Monolithic Crystal Oscillator", IBM Technical Disclosure Bulletin, vol. 20, No. 3, Aug. 1977.

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