High frequency MOSCAP

Details High frequency MOSCAP High frequency MOSCAP

1990-08-29

1991-10-22

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 437 41, 357 51, H01G 406, H01G 700, H01L 2128, H01L 2702

Patent

active

050601105

ABSTRACT:
A MOSCAP that includes a semiconductor layer (103) having gold impurities sufficient to increase the density of deep recombination traps in the semiconductor bandgap. During operation of the MOSCAP in high frequency, reverse bias operating conditions, these deep recombination traps will facilitate formation of an inversion layer that will maintain relatively stable capacitive characteristics for the resultant MOSCAP.

REFERENCES:
patent: 4088799 (1978-05-01), Kurtin
patent: 4923823 (1990-05-01), Kohno
patent: 4956698 (1990-09-01), Wang
patent: 4958204 (1990-09-01), Blanchard et al.

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