Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices
Reexamination Certificate
2001-09-13
2004-03-30
Graybill, David E. (Department: 2827)
Electricity: electrical systems and devices
Housing or mounting assemblies with diverse electrical...
For electronic systems and devices
C361S795000
Reexamination Certificate
active
06714422
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a high frequency module device and a method for producing the device. More particularly, it relates to a high frequency module device loaded in a variety of electronic equipment, such as personal computers, a portable telephone set or audio equipment to form an ultra-small-sized communication function module having e.g., an information communication function or an information storage function.
2. Description of Related Art
The information of various sorts, such as music, speech or pictures, has come to be handled readily by a personal computer or a mobile computer in recent years with the advent of data digitizing technique. Moreover, the above information may be compressed in bands by speech codec or picture codec techniques and has come to be distributed readily and efficiently to a variety of communication terminal equipment by digital communication or digital broadcast. For example, the audio video data (AV data) can be received outdoors by portable telephone sets.
Meanwhile, as a network system convenient for a small territory, including homes, has now been proposed, variable utilization of transmission/reception systems for e.g., data has become possible. As such network system, a variety of next-generation wireless systems, such as a narrow band radio communication system of the 5 GHz band, as proposed in IEEE 802.1a, radio LAN system of 2.45 band, as proposed in IEEE 802.1b, or the short range radio communication system, termed Bluetooth, are stirring up notice. In a transmission/reception system for e.g., data, such wireless network systems are effectively utilized to exchange a variety of data, to access the Internet or to transmit/receive data in households or outdoors in a handy manner without using e.g., relaying devices.
Meanwhile, in a communication terminal equipment, it is necessary to modulate/demodulate analog high frequency signals in the transmission/reception unit. So, a high frequency transmission/reception circuit
100
of a superheterodyne system, in which the transmission/reception signals are first converted into signals of an intermediate frequency, as shown in
FIG. 1
, is routinely used.
A high frequency transmission/reception circuit
100
includes an antenna unit
101
provided with an antenna or with a changeover switch for transmitting or receiving information signals, and a transmission/reception switching unit
102
for switching between transmission and reception. The high frequency transmission/reception circuit
100
also includes a receipt circuit unit
105
made up e.g., of a frequency conversion circuit unit
103
or with a demodulation circuit unit
104
. The high frequency transmission/reception circuit
100
also includes a transmission circuit unit
109
made up e.g., of a power amplifier
106
, a driving amplifier
107
and a modulation circuit unit
108
. The high frequency transmission/reception circuit
100
also includes a reference frequency generating circuit for supplying a reference frequency to the receipt circuit unit
105
or to the transmission circuit unit
109
.
The high frequency transmission/reception circuit
100
has an extremely large number of component parts, such as large-sized functional components, interposed between respective stages, such as a variety of filters, local oscillators (VCO) or SAW filters, or passive components, such as inductors, resistors or capacitors, proper to the high frequency analog circuits, such as matching circuits or bias circuits. With the high frequency transmission/reception circuit
100
, each circuit part is designed as an IC, however, the filter interposed between the respective stages cannot be built into the IC. Moreover, a matching circuit is necessary to provide as an exterior type circuit. Thus, the high frequency transmission/reception circuit
100
is generally bulky in size to present obstacles in reducing the size and weight of the communication terminal equipment.
On the other hand, a high frequency transmission/reception circuit
110
of the direct conversion system, designed to transmit/receive information signals without conversion into an intermediate frequency, as shown in
FIG. 2
, is also used in the communication terminal equipment. In this high frequency transmission/reception circuit
110
, information signals, generated in a source, are directly modulated in a modulation circuit unit
114
to the preset frequency range, without conversion to the intermediate frequency, and transmitted over an antenna
111
through an amplifier
115
and a transmission/reception switching unit
112
.
In such high frequency transmission/reception circuit
110
, in which the information signals are transmitted/received by direct detection without conversion of the intermediate frequency of the information signals, the number of component parts, such as filters, is reduced to simplify the overall structure so that expectation may be made of a structure closer to a one-chip structure. However, in the high frequency transmission/reception circuit
110
, the filters or matching circuits, arranged on the downstream side, need to be coped with. Moreover, with the high frequency transmission/reception circuit
110
, in which the information signals are amplified once and for all in the high frequency stage, it becomes difficult to realize a sufficient gain such that it is necessary to perform amplification in the baseband portion. Thus, the high frequency transmission/reception circuit
110
is in need of a DC offset cancelling circuit or a redundant low-pass filter, while the overall power consumption is increased.
In the conventional high frequency transmission/reception circuit, requirements for reduction in size or weight of the communication terminal equipment cannot be met satisfactorily for the superheterodyne system or the direct conversion system. For this reason, a variety of attempts have been made in designing the high frequency transmission/reception circuit as a small-sized module by a simplified structure based on e.g., a Si-CMOS circuit. That is, one of the attempts is to form an active device of high properties on an Si substrate and to build filter circuits or resonators on an LSI as well as to form the logic LSI of the baseband portion as an integrated circuit to produce a so-called one-chip high frequency transmission/reception module.
However, in such high frequency transmission/reception module, how an inductor of high performance is to be formed on an LSI is crucial. In a high frequency transmission/reception circuit
120
, a large-sized recess
124
is formed in register with an inductor forming site
123
of an Si substrate
121
and an SiO
2
insulating layer
122
, as shown in FIG.
3
. In the high frequency transmission/reception circuit
120
, a first wiring layer
125
is formed facing the recess
124
, while a second wiring layer
126
closing the recess
124
is formed to form an inductor
127
. In another type of the high frequency transmission/reception module, the wiring pattern is segmented and raised from the substrate surface to float in air to form an inductor. However, in such high frequency transmission/reception module, the process of forming the inductor is extremely labor-consuming such that the production cost is raised due to the increased number of process steps.
On the other hand, in a one-chip high frequency transmission/reception module, electrical interference of an Si substrate interposed between the high frequency circuit portion of an analog circuit and a baseband circuit portion of a digital circuit poses a serious problem. As for the high frequency transmission/reception module, an Si substrate high frequency transmission/reception module
130
shown in
FIG. 4
or a glass substrate high frequency transmission/reception module
140
shown in
FIG. 5
has been proposed. In the high frequency transmission/reception module
130
, an SiO
2
layer
132
is formed on an Si substrate, after which a passive elements forming layer
133
is formed by a lit
Nakayama Hirokazu
Ogawa Tsuyoshi
Okubora Akihiko
Oya Yoichi
Dinh Tuan
Frommer William S.
Frommer & Lawrence & Haug LLP
Graybill David E.
Smid Dennis M.
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