High frequency masterslice monolithic integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

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257203, 257204, 257205, 257206, 257207, 257208, 257379, 257503, 257508, 257659, H01L 2710, H01L 2900

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active

057395608

ABSTRACT:
A monolithic integrated circuit utilizing areas associated with unused devices for wiring signal lines, thereby implementing effective wiring and improving high frequency characteristics. A common substrate consisting of a semiconductor substrate, and active devices, capacitor electrodes and resistors formed on the semiconductor substrate, is followed by a dielectric film, a ground metal, a dielectric film whose thickness is equal to or greater than 1 .mu.m, and signal lines. A desired circuit is formed by connecting the signal lines with electrodes of the active devices and other elements via, holes in the dielectric films, and windows of the ground metal. The windows of the ground metal are formed over portions of active devices which are used as components of the circuit.

REFERENCES:
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patent: 4933860 (1990-06-01), Liu
patent: 5223735 (1993-06-01), Kinoshita
patent: 5517055 (1996-05-01), Pasch
Turner et al, "Application Specific MMIC: A Unique and Affordable Approach to MMIC Development", IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp.9-14.
Blumberg et al, "A 640K Transitor Sea-of-Gates 1.2.mu. Micron HCMOS Technology",IEEE International Solid-State Circuits Conference, Feb. 17, 1988, pp. 74, 75, 308.
Banba et al, "Small-Sized MMIC Amplifiers Using Thin Dielectric Layers", IEEE Transtions on Microwave Theory and Techniques, vol. 43, No. 3, Mar. 1995, pp. 485-492.
Fukuda et al, "A CMOS Pair-Transitor Array Master-slice", 1982 Symposium on VLSI Technology, IEEE Cat. No. 82 CH 1822-6, Sept. 1-3, 1982/Kanagawa, pp. 16,17.

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