Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Patent
1995-09-14
1998-04-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
257203, 257204, 257205, 257206, 257207, 257208, 257379, 257503, 257508, 257659, H01L 2710, H01L 2900
Patent
active
057395608
ABSTRACT:
A monolithic integrated circuit utilizing areas associated with unused devices for wiring signal lines, thereby implementing effective wiring and improving high frequency characteristics. A common substrate consisting of a semiconductor substrate, and active devices, capacitor electrodes and resistors formed on the semiconductor substrate, is followed by a dielectric film, a ground metal, a dielectric film whose thickness is equal to or greater than 1 .mu.m, and signal lines. A desired circuit is formed by connecting the signal lines with electrodes of the active devices and other elements via, holes in the dielectric films, and windows of the ground metal. The windows of the ground metal are formed over portions of active devices which are used as components of the circuit.
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Kamogawa Kenji
Nishikawa Kenjiro
Tokumitsu Tsuneo
Toyoda Ichihiko
Ngo Ngan V.
Nippon Telegraph and Telephone Corporation
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