High frequency magnetron plasma apparatus

Details High frequency magnetron plasma apparatus High frequency magnetron plasma apparatus

1994-11-09

1997-02-25

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MA, 156345, 20429811, C23C 1600

Patent

active

056055765

ABSTRACT:
An object of the present invention is to increase the energy efficiency of a plasma apparatus and provide a high-frequency magnetron plasma apparatus which can precisely control plasma. The plasma apparatus has a susceptor electrode, a plasma exciting electrode, magnets mounted on the plasma exciting electrode, and a magnetic shield provided around the plasma exciting electrode, all of which are arranged in a vacuum chamber. The magnetic shield has a high impedance for a high frequency. The magnetic shield is preferably earthed with a direct current, more preferably earthed through an inductance.

REFERENCES:
patent: 4155825 (1979-05-01), Foumier
patent: 4576700 (1986-03-01), Kadokura
patent: 4865709 (1989-09-01), Nakagawa
patent: 4957605 (1990-09-01), Kurwitt
patent: 5376211 (1994-12-01), Harada
patent: 5397448 (1995-03-01), Gesche
Advanced Plasma Processing Equipment without Water Surface Damage and chamber Material Contamination; Authors: H. Goto, M. Sasaki, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura and O. Kamiya; pp. 606, 607.

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