Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1995-10-25
1998-08-18
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257588, H01L 2900
Patent
active
057961573
ABSTRACT:
A high-frequency lateral PNP transistor includes a base region laterally delimited by P type emitter and collector regions, and at the top by a surface portion of the N type semiconductor body housing the active area of the transistor. The surface portion delimiting the base region presents no formations of insulating material grown across the surface, so that the width (W.sub.B) of the base region is reduced and ensures optimum dynamic characteristics of the transistor. The base contact may be located directly over the surface portion facing the base region, to reduce the extrinsic base resistance and overall size of the device, or it may be located remotely and connected to the base region by a buried layer and sinker region to further reduce the base width.
REFERENCES:
patent: 5323057 (1994-06-01), Cook et al.
patent: 5493149 (1996-02-01), Jerome et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 10, pp. 4050-4052, by Wieder, Mar.1979.
Patent Abstracts of Japan, vol. 12, No. 281 (E-641)(3128) Aug. 2, 1988 & JP-A-63 058 870 Fujitsu Ltd.
IBM Technical Disclosure Bulletin, vol. 22, No. 10, Mar. 1980, New York US, p. 4543, E. Berndlmaier, et al., "Lateral PNP Transistor with Minimal Basewidth".
IBM Technical Disclosure Bulletin, vol. 25, No. 8, Jan. 1983, New York US, pp. 4171-4173, T.H. Ning "Narrow-Base Epitaxial-Base Lateral PNP".
International Electron Devices Meeting Technical Digest 1989, Dec. 1989, Washington, DC USA, pp. 791-794, P.C. Hunt, "Bipolar Device Design for High Density High Performance Applications".
IEEE Transactions On Electron Devices, vol. 41, No. 3, Mar. 1994, New York US pp. 321-329, T. Yamaguchi, et al., Process Investigations For a 30 Ghz ft Submicrometer Double Poly-Si Bipolar Technology.
Fallico Giuseppe
Zambrano Raffaele
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Prenty Mark V.
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