Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1996-04-26
1998-08-18
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
257700, 257723, 257724, 257713, 257698, 257712, H01L 2701, H01L 2314, H01L 2350, H01L 2312
Patent
active
057961654
ABSTRACT:
A multilayer structure composed of a plurality of substrates stacked in layers is provided with a cavity formed by partially removing some of the substrates. A semiconductor chip internally provided with an active component such as an FET is mounted on the bottom face of the cavity. Passive components including a high-frequency matching circuit and a bias circuit are distributed in the uppermost layer, lowermost layer, and middle layer lying between the substrates of the multilayer structure. For example, a chip component partially composing the high-frequency matching circuit is disposed in the uppermost layer, while the bias circuit is disposed in the middle layer. Since only a reduced number of substrates underlie the semiconductor chip internally provided with the active component primarily serving as a heating element, an excellent heat dissipating ability is retained even when each of the substrates of the multilayer structure is composed of a versatile material such as alumina. By utilizing the characteristic, there can be implemented a high-frequency integrated circuit device exhibiting a high degree of integration and usable in mobile communication such as a portable telephone.
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Kanazawa Kunihiko
Makioka Satoshi
Tateoka Kazuki
Yoshikawa Noriyuki
Matsushita Electronics Corporation
Thomas Tom
Williams Alexander Oscar
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