High frequency integrated circuit channel capacitor

Details High frequency integrated circuit channel capacitor High frequency integrated circuit channel capacitor

1989-01-06

1989-09-12

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

357 51, H01I 506, H01L 2702

Patent

active

048665673

ABSTRACT:
A high frequency integrated circuit channel capacitor structure comprised of interdigitated field effect transistor gate electrodes and source/drain regions of minimum dimension and respective common connection. The multiplicity of parallel connected capacitive regions between the polysilicon gate electrode and a channel region in the substrate provide precisely controlled capacitors with exceptionally low resistance. Metallization contacts to the gate polysilicon and source/drain regions at each interleaved pattern, together with minimum channel length dimensions, minimizes the capacitive resistance. A CMOS configuration is also feasible.

REFERENCES:
patent: 3860945 (1975-01-01), Dawson
patent: 4163245 (1979-07-01), Kinoshita
patent: 4416049 (1983-11-01), McElroy
patent: 4595942 (1986-06-01), Lohstroh
patent: 4772930 (1988-09-01), Anami et al.

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