High-frequency induction heater and method of producing semicond

Details High-frequency induction heater and method of producing semicond High-frequency induction heater and method of producing semicond

1996-01-29

1998-08-11

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 49, 117 51, C30B 1320

Patent

active

057922586

ABSTRACT:
A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of power supply terminals provided for supplying a high-frequency current to the associated heating coil, with the power supply terminals of one of the heating coils being disposed in a space defined between opposite ends of an adjacent heating coil disposed outside the one heating coil, wherein a pair of electrically conductive members is attached to the pair of power supply terminals, respectively, of at least an innermost one of the heating coils so as to cover a space defined between the power supply terminals of the innermost heating coil. With the induction heater thus constructed, the so-called "pulsation", i.e., microscopic resistivity fluctuations and the macroscopic resistivity distribution in the diametrical and growth directions can be improved at one time.

REFERENCES:
patent: 3827017 (1974-07-01), Keller
patent: 3898413 (1975-08-01), Keller
patent: 4749837 (1988-06-01), von Ammon et al.
patent: 5055647 (1991-10-01), Heyes et al.
patent: 5266765 (1993-11-01), Storm et al.
patent: 5324906 (1994-06-01), Dong

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