High frequency IC power amplifier

Amplifiers – With semiconductor amplifying device – Including field effect transistor

Patent

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Details

330290, 330291, 330293, H03F 134

Patent

active

050178873

ABSTRACT:
An integrated semiconductor arrangement comprising a high-frequency power amplifier stage, which comprises two field-effect transistor having first connection means to influence the output power by means fo the unit gate width of the amplifier stage, and second connection means to influence the value of the input capacitance of the amplifier stage. This stage also comprises means to ensure the feedback of direct current to ground and also includes D.C. biasing means.

REFERENCES:
patent: 4591802 (1986-05-01), Asazawa

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