High-frequency high-power transistor

Details High-frequency high-power transistor High-frequency high-power transistor

1993-02-02

1994-12-06

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Transmission line lead

257259, 257532, 257584, 257666, 257724, 257725, 257728, H01L 2348, H01L 2940, H01L 2980, H01L 2972

Patent

active

053714059

ABSTRACT:
An improved high-frequency high-power transistor includes a transistor chip and capacitors forming an RF shunting internal matching circuit. The capacitors are connected with RF shunting wires to a collector pad to which the transistor chip is die-bonded. The wires have the same lengths and are disposed symmetrically relative to input and output leads of transistor cells within said transistor chip so that they uniformly influence the transistor cells.

REFERENCES:
patent: 3713006 (1973-01-01), Litty et al.
patent: 3893159 (1975-07-01), Martin
patent: 3936864 (1976-02-01), Benjamin
patent: 3969752 (1976-07-01), Martin et al.
patent: 3996603 (1976-12-01), Smith
patent: 4042952 (1977-08-01), Kraybill
patent: 4107728 (1978-08-01), Max
patent: 4200880 (1980-04-01), Frey
patent: 4393392 (1983-07-01), Hale
patent: 4456888 (1984-06-01), Ayasli
patent: 4783697 (1988-11-01), Benenati et al.
patent: 4843440 (1989-06-01), Huang

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