Patent
1987-08-10
1989-06-27
James, Andrew J.
357 13, 357 238, 357 20, H01L 2980
Patent
active
048434418
ABSTRACT:
A high-frequency, low-gate leakage, low-noise, lateral junction field-effect transistor has a short, heavily doped channel of length determined by the dimensions of a backgate within a semiconductor substrate, and a more lightly doped drift region adjacent to the channel. A source region is formed on an end of the channel spaced from the drift region, and a drain region is formed on an end of the drift region spaced from the channel, such that the current flowing between the source and drain regions passes through channel and drift region. A gate electrode of material opposite to the channel forms a rectifying junction with the channel, and an electric field developed in the channel between the gate electrode and the backgate in response to gate and drain potential controls current flow between source and drain. The gate electrode overlays the drift region enough that the depletion region that forms with the application of drain potential moves away from the channel and semiconductor surface.
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patent: 4288800 (1981-09-01), Yoshida et al.
patent: 4454523 (1984-06-01), Hill
patent: 4670764 (1987-06-01), Benjamin
patent: 4757362 (1988-07-01), Biwa et al.
Jackson, Jr. Jerome
James Andrew J.
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