High-frequency, high-gain, push-pull amplifier circuit

Amplifiers – With semiconductor amplifying device – Including push-pull amplifier

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330276, 330292, 330307, 357 22, H03F 326

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046478671

ABSTRACT:
A high-gain, high-frequency, high-power, push-pull amplifier employing a pair of static induction transistors (SIT's) in common-source configuration. A pair of capacitances each of approximately the same capacitive value as the drain-to-gate parasitic feedback capacitance of each SIT are cross-coupled between the drains and gates of the pair of SIT's to neutralize the drain-to-gate capacitances and provide stable operation.

REFERENCES:
patent: 2218309 (1940-10-01), Davis et al.
patent: 2548770 (1951-04-01), Caraway
patent: 3156872 (1964-11-01), Tongue
patent: 3848198 (1974-11-01), De Brecht et al.
Gray et al, Radio Transmitters, McGraw-Hill, 1961, pp. 64, 65.
Della-Mussia, "100 Watts at 1 GHz with the First Hyperfrequency SIT on the Market", Electron & Appl. Ind., (France), No. 275, Nov. 1, 1975, pp. 36, 37.

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