High frequency hetero junction type field effect transistor usin

Details High frequency hetero junction type field effect transistor usin High frequency hetero junction type field effect transistor usin

1997-11-26

1999-09-28

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257280, 257284, 257192, 257279, 257 20, H01L 29778, H01L 29205

Patent

active

059593172

ABSTRACT:
A hetero junction type field effect transistor can control a short channel effect, reduce the fluctuation of a threshold, and improve a yield. The hetero junction type field effect transistor comprises: a semiconductor substrate, a first electron feed layer made of a doped semiconductor having a wider band gap than the channel layer, a channel layer made of a non-doped semiconductor, a second electron feed layer comprising a laminate structure of a plurality of semiconductor layers having a wider band gap than the channel layer and having a thickness of 100 .ANG. or less, and a gate electrode, a source electrode, and a drain electrode.

REFERENCES:
patent: 5258632 (1993-11-01), Sawada
patent: 5436470 (1995-07-01), Nakajima
patent: 5652440 (1997-07-01), Chang
"High-Performance InP-Based Enhancement-Mode HEMT's Using Non-Alloyed Ohmic Contacts and Pt-Based Buried-Gate Technologies" by Kevin J. Chen et al. IEEE Transaction on Electron Device, vol. 43, No.2 pp. 252-253, Feb. 1996.

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