High-frequency GaAs substrate based schottky barrier diodes

Details High-frequency GaAs substrate based schottky barrier diodes High-frequency GaAs substrate based schottky barrier diodes

1997-05-30

2000-03-14

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

257477, H01L 27095

Patent

active

060376465

ABSTRACT:
A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector layer. A suitable dielectric material is deposited on top of the collector layer. Vias are formed in the collector layer and subcollector layer for the barrier and ohmic contacts. The collector via is relatively deeply etched into the collector layer to lower the series resistance between the barrier and ohmic contacts, which results in relatively higher cut-off frequency performance.

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