High frequency, frequency multiplier using parallel Gunn diodes

Details High frequency, frequency multiplier using parallel Gunn diodes High frequency, frequency multiplier using parallel Gunn diodes

1990-03-30

1990-12-18

Pascal, Robert J.

Oscillators

Solid state active element oscillator

Significant distributed parameter resonator

H03B 512

Patent

active

049789287

ABSTRACT:
A Gunn oscillator having a plurality of Gunn elements connected in parallel etween a common anode and a common cathode. In one embodiment, the elements are separated by barrier layers that capacitively couple domain fields into adjacent elements thereby sequentially triggering them. There is a time delay between the domain formation in one element and the domain formation in the next. Another embodiment has elements of differing lengths to establish differing threshold voltages for triggering domains in each element. Sequentially triggering domain formation, e.g., by a simple sawtooth voltage, creates domains within each element. Again, there is a time delay between the domain formations in the elements. In either embodiment, collection of the domains at the common anode results in multiplication of the oscillator's base frequency.

REFERENCES:
patent: 3365583 (1968-01-01), Gunn
patent: 3624556 (1971-11-01), Copeland

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