High frequency FET switch and driver circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307584, 3072963, 307304, 333104, H03K 17687, H03P 110

Patent

active

050721429

ABSTRACT:
A semiconductor integrated circuit includes a first FET for controlling transfer of a high frequency signal, first and second capacitors connected to a gate of the first FET directly or through a resistor or a 1/4 wavelength line, a second FET having its drain connected to the first capacitor and its source grounded at high frequencies band, and a third FET having its drain connected to said second capacitor and its source grounded at high frequencies.

REFERENCES:
patent: 4728826 (1988-03-01), Einzinger et al.
patent: 4845389 (1989-07-01), Pyndiah et al.
patent: 4873460 (1989-10-01), Rippel
patent: 4908531 (1990-03-01), Podell et al.
patent: 4939485 (1990-07-01), Eisenberg

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