Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1989-12-18
1994-06-14
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257256, 257280, 257471, 257476, H01L 2980
Patent
active
053212843
ABSTRACT:
A GaAs field effect transistor with a source contact including both an ohmic contact and a Schottky barrier, the Schottky barrier between the ohmic contact and the gate, is disclosed. The Schottky barrier provides a high frequency source contact close to the active channel and thereby reduces the parasitic source resistance at microwave and higher frequencies.
REFERENCES:
patent: 3652908 (1972-03-01), Lepselter et al.
patent: 4389660 (1983-06-01), Decker
patent: 4422087 (1983-12-01), Ronen
patent: 4498093 (1985-02-01), Allyn et al.
patent: 4628338 (1986-12-01), Nakayama et al.
patent: 4695869 (1987-09-01), Inoue et al.
IEEE Transactions on Electron Devices 1983 vol. 30 p. 1861 by Sugiura.
Solid State Electronics 1982 by Heilblum vol. 25 p. 185.
Electron Letters 1981 by Meignant vol. 17 p. 107.
Scott Bentley N.
Zimmerman Dale E.
Donaldson Richard L.
Kesterson James C.
Prenty Mark V.
Stoltz Richard A.
Texas Instruments Incorporated
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