High frequency diverse semiconductor switch

Details High frequency diverse semiconductor switch High frequency diverse semiconductor switch

1985-08-09

1987-06-09

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307544, 307574, H03K 1760, H03K 17687

Patent

active

046722459

ABSTRACT:
Provided is a power semiconductor device operable to be switched at high frequencies. The semiconductor device according to the present invention is applied to a three-terminal BIMOS power semiconductor device in which a MOS-FET (2) is connected in parallel with a bipolar transistor (3) while the gate of the MOS-FET (2) is connected with the base of the bipolar transistor (3) through a reference-voltage diode (6) and a fast switching diode (7) so that the operation of the semiconductor device can be controlled by one driving circuit (1).

REFERENCES:
patent: 3417260 (1968-12-01), Foster, Jr.
patent: 4551643 (1985-11-01), Russel et al.
patent: 4604535 (1986-08-01), Sasayama et al.
"A Comparison Between BIMOS Device Types", M. S. Adler, IEEE Power Electronics Specialists Conference, Jun. 1982, pp. 371-377.
"A New BIMOS Switching Stage for 10 KW Range", E. Hebenstreit, PCI, Apr. 1983 Proceedings, pp. 140-145.
"Status and Emerging Directions of MOSPOWER Technology", Dr. Richard Blanchard, PCI, Apr. 1983 Proceedings, pp. 162-174.

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