Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Reexamination Certificate
2011-04-05
2011-04-05
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
C257SE33003, C438S141000
Reexamination Certificate
active
07919776
ABSTRACT:
A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×1015to 5×1017atoms/cm3, interstitial oxygen concentration of 6.5×1017to 13.5×1017atoms/cm3, and a resistivity of 100 Ωcm or more.
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The following website provided an equation that converted atoms/cm3 to parts per million in silicon. http://pub2.bravenet.com/faq/show.php?usernum=138622193&catid=316.
http://pub2.bravenet.com/faq/show.php?usernum=138622193&catid=316 Dated 2008.
Akatsuka, M., et al.,Pining Effects on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method, Jpn. J. Appl. Phys., vol. 36 (1997), pp. L 1422-L 1425.
Sueoka, K., et al.,Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers, Jpn. J. Appl. Phys., vol. 36 (1997), pp. 7095-7099.
A.R.Bean, et al., The Effect of Carbon on Thermal Donor Formation in Heat Treated Pulled Silicon Crystals, The Journal of Physics and Chemistry of Solids, Feb. 1972, vol. 33, No. 2, Pergamon Press, Great Britain.
Korean Office Action issued on Jan. 29, 2008 in related Korean Application 10-2007-0007284, and its English language translation.
Korean Office action dated Mar. 28, 2008 in Korean Application No. 10-2007-0007283 (with its English translation), 12 pages total.
Gordon Matthew
Kolisch & Hartwell, P.C.
Le Thao X
Sumco Corporation
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