Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Reexamination Certificate
2011-02-22
2011-02-22
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
C257SE33003, C438S141000
Reexamination Certificate
active
07893434
ABSTRACT:
A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×1015to 5×1017atoms/cm3, interstitial oxygen concentration of 6.5×1017to 13.5×1017atoms/cm3, and a resistivity of 100 Ωcm or more.
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Internet page- http://pub2.bravenet.com/faq/show.php?usernum=138622193&catid=316.
Korean Office Action issued on Jan. 29, 2008 in related Korean Application No. 10-2007-0007284, and its English language translation.
A.R.Bean, et al., The Effect of Carbon on Thermal Donor Formation in Heat Treated Pulled Silicon Crystals, The Journal of Physics and Chemistry of Solids, Feb. 1972, vol. 33, No. 2, Pergamon Press, Great Britain.
Akatsuka, M., et al., Pining Effects on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method, Jpn. J. Appl. Phys., vol. 36 (1997), pp. L 1422-L 1425.
Sueoka, K., et al., Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers, Jpn. J. Appl. Phys., vol. 36 (1997), pp. 7095-7099.
Korean Intellectual Property Office, Notice of Preliminary Rejection, corresponding Korean Patent Application No. 10-2007-0007283; mailed: Mar. 28, 2008.
Gordon Matthew
Kolisch & Hartwell, P.C.
Le Thao X
Sumco Corporation
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