High frequency diode and method for producing same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...

Reexamination Certificate

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C257SE33003, C438S141000

Reexamination Certificate

active

07893434

ABSTRACT:
A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×1015to 5×1017atoms/cm3, interstitial oxygen concentration of 6.5×1017to 13.5×1017atoms/cm3, and a resistivity of 100 Ωcm or more.

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Internet page- http://pub2.bravenet.com/faq/show.php?usernum=138622193&catid=316.
Korean Office Action issued on Jan. 29, 2008 in related Korean Application No. 10-2007-0007284, and its English language translation.
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