Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Avalanche diode
Reexamination Certificate
2004-09-24
2010-06-15
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Avalanche diode
Reexamination Certificate
active
07737470
ABSTRACT:
A high-frequency diode has a first semiconductor area with a first conductivity type as well as a barrier area adjacent to the first semiconductor area, which has a second conductivity type, which differs from the first conductivity type. Further, the high-frequency diode has a second semiconductor area adjacent to the barrier area, which has the second conductivity type and a dopant concentration which is lower than the dopant concentration of the barrier are or equal to zero. Further, the high-frequency diode has a third semiconductor area adjacent to the second semiconductor area, which has the same conductivity type and a higher dopant concentration than the barrier area. Through such a structure it is possible to provide a high-frequency diode with short switching times and low bias.
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Infineon - Technologies AG
Maginot Moore & Beck
Nguyen Dao H
Nguyen Tram H
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