Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1997-07-10
1999-08-03
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
257688, 257698, 257787, 257674, H01L 2334, H01L 23495
Patent
active
059329270
ABSTRACT:
A high-frequency device package includes a base, a high-frequency device mounted on the base and having a power supply electrode, a signal electrode, and a ground electrode disposed on a surface thereof, a plurality of leads electrically connected respectively to the power supply electrode, the signal electrode, and the ground electrode using a tape carrier, and a resin body sealingly encasing the high-frequency device. The resin body is formed by dropping a molten resin mass onto the base in covering relation to the high-frequency device and thereafter solidifying the dropped resin mass to sealingly encase the high-frequency device.
REFERENCES:
patent: 5182631 (1993-01-01), Tomimuro et al.
patent: 5519252 (1996-05-01), Soyano et al.
Koizumi Takao
Kosugi Yuhei
Eckert II George C.
Martin-Wallace Valencia
NEC Corporation
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