High frequency device module and manufacturing method thereof

Details High frequency device module and manufacturing method thereof High frequency device module and manufacturing method thereof

2008-04-30

2009-12-22

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257S678000, C257S700000, C257S709000, C257S713000, C257S787000, C257SE23128, C257SE23167, C257SE23169

Reexamination Certificate

active

07635918

ABSTRACT:
A high frequency device module of an embodiment of a current invention includes: an insulation substrate in which electrodes are provided on the front surface thereof and a grounding substrate is provided on the rear surface thereof; a high frequency device provided on the insulation substrate with a terminal of the device connected to the electrodes; potting material for covering the high frequency device; and a metallic layer provided on the potting material and connected to the grounding substrate.

REFERENCES:
patent: 4864384 (1989-09-01), Boudot et al.
patent: 6621162 (2003-09-01), Ishida et al.
patent: 04-248871 (1992-09-01), None
patent: 2001-035956 (2001-02-01), None
patent: 2001-345419 (2001-12-01), None
patent: 2003-179181 (2003-06-01), None
patent: 2003-298004 (2003-10-01), None
patent: 2005-109306 (2005-04-01), None

Affiliated with

Also associated with

Rating

High frequency device module and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High frequency device module and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High frequency device module and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4054794