High-frequency device

Details High-frequency device High-frequency device

2006-02-14

2006-02-14

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257S678000

Reexamination Certificate

active

06998710

ABSTRACT:
A high-frequency device has a semiconductor substrate; a high-frequency circuit layer formed on the substrate and including a circuit element and a multilayer wiring layer; electrically conductive pads; rewiring layers connected to the electrically conductive pads; an electrically insulating sealing layer formed on the first electrically insulating layer and the rewiring layer and having a thickness larger than the multilayer wiring layer; electrically conductive posts provided inside the electrically insulating sealing layer and between the rewiring layer and the mounting connection terminals. A first electrically conductive post corresponding to a power source has a first diameter; a second electrically conductive post corresponding to an input of input amplifier has a second diameter less than the first diameter; and a third electrically conductive post corresponding to an output of power output amplifier has a third diameter larger than the second diameter.

REFERENCES:
patent: 9-306917 (1997-11-01), None
patent: 10-64953 (1998-03-01), None
patent: 2002-313930 (2002-10-01), None
patent: 2003-243570 (2003-08-01), None

Affiliated with

Also associated with

Rating

High-frequency device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-frequency device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3647756