High frequency control of a semiconductor switch

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

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C327S443000, C327S108000

Reexamination Certificate

active

07602229

ABSTRACT:
Resonant gate driver circuits provide for efficient switching of, for example, a MOSFET. However, often an operation of the resonant gate driver circuit does not allow for an application where high switching frequencies are required. According to the present invention, a pre-charging of the inductor of the resonant gate driver circuit is performed. This allows for a highly efficient and fast operation of the MOSFETs.

REFERENCES:
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patent: 7091753 (2006-08-01), Inoshita
patent: 2006/0192437 (2006-08-01), Tolle et al.
Maksimovic D Ed—Institute of Electrical and Electronics Engineers: “A MOS Gate Drive With Resonant Transitions”; Proceedings of the Annual Power Electronics Specialist Conference Massachusetts Jun. 25-27; 1991 New York IEEE, U.S.; vol. Conf. 22; pp. 527-532.

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