Amplifiers – With semiconductor amplifying device – Including gain control means
Reexamination Certificate
2007-05-15
2009-06-16
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including gain control means
C330S296000, C330S291000, C330S285000
Reexamination Certificate
active
07548116
ABSTRACT:
A high-frequency circuit is provided. In the high-frequency circuit, a first PIN diode is provided in a signal line and a second PIN diode is provided between the signal line and ground so that an attenuating circuit is formed. A power supply is applied to one end of a series circuit composed of two resistors. The other end of the series circuit is connected to ground via a drain-source path of an FET. An AGC voltage is applied to a gate of the FET. A bias voltage in accordance with the AGC voltage is applied to a base voltage of a low-noise amplifier via the first and second PIN diodes so as t control attenuation of the first PIN diode and an operating current of the low-noise amplifier.
REFERENCES:
patent: 5383223 (1995-01-01), Inokuchi
patent: 5399927 (1995-03-01), Gruber et al.
patent: 6069528 (2000-05-01), Kashima
patent: 6239659 (2001-05-01), Grassle
patent: 6271727 (2001-08-01), Schmukler
patent: 7312655 (2007-12-01), Kim
patent: 7332961 (2008-02-01), Blednov
patent: 5-4626 (1993-01-01), None
patent: 9-83295 (1997-03-01), None
patent: 10-65469 (1998-03-01), None
Alps Electric Co. ,Ltd.
Beyer Law Group LLP
Nguyen Patricia
LandOfFree
High-frequency circuit of reduced circuit scale does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-frequency circuit of reduced circuit scale, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency circuit of reduced circuit scale will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4138654