Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Patent
1996-02-16
2000-09-12
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
257566, H01L 27082, H01L 27102, H01C 2973
Patent
active
061181722
ABSTRACT:
An epitaxial layer is formed on a main surface of a high specific resistance silicon substrate having a specific resistance of at least 100 .OMEGA.cm. A circuit element such as an active element is formed in epitaxial layer. An oxide film is formed such that it covers a surface of epitaxial layer. A metal interconnection layer is formed on a surface of oxide film. An oxide film is formed such that it covers metal interconnection layer. Thus, an inexpensive HF circuit device capable of reducing transmission loss of HF signals can be obtained.
REFERENCES:
patent: 4418470 (1983-12-01), Naster et al.
patent: 5559349 (1996-09-01), Cricchi et al.
Arye Rosen et al., "Silicon as a Millimeter-Wave Monolithically Integrated Substrate-A New Look", RCA Review, vol. 42, Dec. 1981, pp. 633-661.
Maurice H. Hanes et al., "Microx.TM.-An All-Silicon Technology for Monolithic Microwave Integrated Circuits", The Electron Device Letters, vol. 14, No. 5, May 1993, pp. 219-221.
"Propagation of picosecond electrical pulses on a silicon-based microstrip line with buried cobalt silicide ground plane,", Appl. Phys. Lett., vol. 58, No. 23, Jun. 10, 1991, 1991 American Institute of Physics, pp. 2604-2606.
Ikeda Tatsuhiko
Kashiba Yoshihiro
Suematsu Noriharu
Yamawaki Masao
Guay John
Mitsubishi Denki & Kabushiki Kaisha
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