High-frequency circuit comprising an integrated capacitor

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357 75, 357 74, H01L 2314, H01L 2348, H01L 2508, H01L 2512

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active

046175865

ABSTRACT:
A high-frequency circuit (11) having at least a semiconductor circuit element (12) which is arranged on a first surface (13) of an insulating substrate (14). At least one (19a, 19b) of the output terminals (17, 18a, 18b, 19a, 19b) of the semiconductor circuit element (12) is electrically coupled to a ground plane (16) through a capacitive element (20) and metallized holes (21, 22). According to the invention, the circuit element (12) is secured a plate (24) of a dielectric material provided with conductive elements (27, 28a, 28b, 29a, 29b) to which the output terminals are soldered. The conductive elements to which the terminals (19a, 19b) are secured are conductively connected to a metallic layer (30a, 30b) constituting a first plate of the capacitive element (20). A conductive layer (31) formed between the plate (24) and the substrate (14) constitutes a second plate of the capacitive element.

REFERENCES:
patent: 3591839 (1971-07-01), Evans
patent: 4183041 (1980-01-01), Goel
patent: 4376287 (1983-03-01), Sechi
patent: 4396936 (1983-08-01), McIver et al.
patent: 4451845 (1984-05-01), Philofsky et al.
patent: 4506285 (1985-03-01), Einzinger
"Active Silicon Chip Carrier"--Bodendorf et al.--IBM Technical Disclosure Bulletin--vol. 15, No. 2, 7-1972, pp. 656-657.

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