Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2000-09-15
2003-09-16
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S700000, C257S703000, C257S707000, C257S734000
Reexamination Certificate
active
06621162
ABSTRACT:
CROSS REFERENCE TO THE RELATED APPLICATION
The subject application is related to subject matter disclosed in the Japanese Patent Application No.Hei11-263697 filed in Sep. 17, 1999 in Japan, to which the subject application claims priority under the Paris Convention and which is incorporated by reference herein.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention is related to an improved receiver/transmitter apparatus by making use of frequencies of microwaves, millimeter waves or the like.
2. Description of the Related Art
A high frequency circuit apparatus in accordance with a conventional technique will be explained with reference to
FIG. 1
which is a cross sectional view thereof. The reference
31
designates a base structure constituting the bottom section of a metallic case for example. On the base structure
31
, a high frequency circuit portion
32
and a direct current circuit portion
33
are implemented.
The high frequency circuit portion
32
is composed of a carrier plate
321
, high frequency circuit elements
322
such as MMICs, FETs and so forth which serve to process high frequency signals and which are located in the carrier plate
321
, and a high frequency substrate
323
which are located in the peripheral location of the high frequency circuit elements
322
. A circuit patterns
324
such as strip lines for transferring high frequency signals is formed on the principal surface of the high frequency substrate
323
while a ground electrode
325
is formed on the rear surface of the high frequency substrate
323
. The ground electrode
325
of the high frequency substrate
323
is joined to the carrier plate
321
. The high frequency circuit elements
322
and the circuit pattern
324
are connected to each other by means of wirings W while the circuit pattern
324
and the ground electrode
325
are electrically connected to each other via through halls
326
.
The direct current circuit portion
33
is composed of a direct current substrate
331
, direct current elements
332
such as condenser chips, resistors and so forth which are located on the direct current substrate
331
, a circuit pattern
333
located on the surface of the direct current substrate
331
, and a ground electrode
334
formed on the rear surface of the direct current substrate
331
. The ground electrode
334
of the direct current substrate
331
is joined to the base structure
31
. The circuit pattern
333
formed on the principal surface of the direct current substrate
331
is electrically connected to the ground electrode
334
formed on the rear surface of the direct current substrate
331
via through halls
335
.
In the case of the above explained configuration, the high frequency circuit portion
32
and the direct current circuit portion
33
are formed separate from each other while the circuit pattern
324
of the high frequency circuit portion
32
and the circuit pattern
333
of the direct current circuit portion
33
is electrically connected to each other, for example, by means of the wirings W made of gold strips.
Next, another example of the high frequency circuit apparatus in accordance with a conventional technique will be explained with reference to FIG.
2
.
The reference
41
designates a base structure constituting the bottom section of a metallic case for example. A multilayer substrate
42
is located on the base structure
41
. The multilayer substrate
42
is composed of first to third substrates
421
,
422
and
423
which are layered in this order from the top. High frequency circuit elements
43
such as MMICs, FETs and so forth are located in the center position together with direct current elements
44
such as condenser chips, resistors and so forth which are located on both sides of the high frequency circuit elements
43
and a circuit pattern
45
for transferring high frequency signals and direct current signals.
For example, circuit patterns
46
and
47
for transferring direct current signals are provided respectively between the first substrate
421
and the second substrate
422
and between the second substrate
422
and the third substrate
423
. A ground electrode
48
is formed on the rear surface of the third substrate
423
while the ground electrode
48
is joined to the base structure
41
.
The high frequency circuit elements
43
and the circuit pattern
45
are electrically connected to each other by means of the wirings W while the through halls
49
serve to electrically connect the circuit patterns
45
to
47
to each other and serve to electrically connect the ground electrode
48
and the circuit patterns
45
to
47
respectively.
In the case of the high frequency circuit apparatus in accordance with the conventional technique as illustrated in
FIG. 1
, when the circuit scale of the system is increased, the lengths of the wirings for supplying a bias voltage are increased resulting in an increased size of the apparatus. Furthermore, the use of an appropriate package, an appropriate shield plate or the like becomes inevitable so that it is difficult to put the high frequency circuit apparatus into commercial production and cut down the price.
In the case of the high frequency circuit apparatus in accordance with the conventional technique as illustrated in
FIG. 2
, the substrate on which the circuit patterns for transferring high frequency signals and direct current signals is multilayered. For this reason, the packing density can be increased and it is possible to form the apparatus in a smaller size. However, since the high frequency circuit elements are formed on an upper layer, heat has to be dissipated to the base structure through a plurality of the substrates which possess a little capability of radiating heat when it is need to dissipate heat as generated by the high frequency circuit elements such as power amplifier elements. Because of this, it is impossible to obtain an excellent thermal dissipation characteristics.
SUMMARY OF THE INVENTION
The present invention has been made in order to solve the shortcomings as described above. It is an object of the present invention to provide a high frequency circuit apparatus which is provided with excellent thermal dissipation characteristics and which is advantageous in shrinking the size and in improving the massproductivity.
In brief, the above and other objects and advantages of the present invention are provided by a new and improved high frequency circuit apparatus comprising:
a multilayer structure consisting of a plurality of insulating layers and a plurality of conductive layers, said insulating layers and said conductive layer being layered alternately with each other; and
a plurality of signal processing circuits provided on said multilayer structure and connected to each other by means of said conductive layer,
wherein said signal processing circuits include at least one high frequency circuit device driven at a high frequency and at least one low frequency circuit device driven at a low frequency lower than said high frequency; and
wherein at least part of said low frequency circuit is located on an upper layer of said multilayer structure while said high frequency circuit is located on a lower layer of said multilayer structure lower than said upper layer.
In a preferred embodiment, further improvement resides in that said multilayer structure is composed of a supporting base substrate and a multilayer substrate mounted on said supporting base substrate.
In a preferred embodiment, further improvement resides in that said high frequency circuit device is provided on said supporting base substrate.
In a preferred embodiment, further improvement resides in that said high frequency circuit device is provided on said supporting base substrate through a conductive film.
In a preferred embodiment, further improvement resides in that said conductive layers are composed of conductive patterns.
In accordance with a further aspect of the present invention, the above and other objects and advantages of the present invention are provided by
Ishida Masaaki
Matsui Norio
Ha Nathan W.
Kabushiki Kaisha Toshiba
Pham Long
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