Metal treatment – Stock – Ferrous
Patent
1985-03-28
1987-03-31
Larkins, William D.
Metal treatment
Stock
Ferrous
148DIG11, 148DIG145, 357 20, 357 36, 357 68, H01L 2972, H01L 2908
Patent
active
046546871
ABSTRACT:
Structures which improve the high frequency performance of bipolar discrete or integrated transistors through minimization of base contact size and hence collector-base capacitance (and collector-substrate capacitance, if integrated), are disclosed. The transistor comprises at least one elongate emitter arm and substantially minimum-dimension base contacts positioned one facing each side of each emitter arm at at least a minimum dimension from each emitter arm. A base diffusion area is positioned under and is minimum-dimensionally larger than the outer perimeter of the areas bounded by all of the smallest imaginary triangles each including a base contact and a facing emitter arm. Specific examples are described, namely a so-called "lozenge" structure, for relatively narrow emitters, a "cross" structure for wider emitters, and a "T" structure.
REFERENCES:
patent: 3582723 (1971-06-01), Kerr
patent: 3746949 (1973-07-01), Nienhuis
patent: 4012764 (1977-03-01), Satonaka
patent: 4072979 (1978-02-01), Palara
J. Andeweg & T. H. J. van den Hurk, "A Discussion of the Design & Properties of a High Power Transistor for Single Sideband Applications", IEEE Trans Electron Devices, vol. Ed. 17, Sep. 1970, pp. 714-724.
H. F. Cooke, "Microwave Transistors: Theory & Design", Proc. IEEE, vol. 59, Aug. 1971, pp. 1163-1181.
D. R. Carley, P. L. McGeough & J. F. O'Brien, "The Overlay Transistor", Electronics, Aug. 23, 1965, pp. 71-77.
M. Fukuta, H. Kisaki & S. Maekawa, "Mesh Emitter Transistor", Proc. IEEE (Lett.), vol. 56, Apr. 1968, pp. 742-743.
IBM Technical Disclosure Bulletin, vol. 15, No. 12, May 1973.
IBM Technical Disclosure Bulletin, vol. 13, No. 2, Jul. 1970.
Electronic Design, Aug. 22, 1985, pp. 37-38.
Cosand, IEEE IEDM, Dec. 1973, Technical Digest, pp. 35-37.
Armstrong R. Craig
Larkins William D.
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