Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent
1995-10-27
1999-11-16
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
257587, 257588, H01L 2782, H01L 27102, H01L 2970, H01L 3111
Patent
active
059863234
ABSTRACT:
A high-frequency bipolar transistor structure includes a base region of a first conductivity type formed in a silicon layer of a second conductivity type, the base region comprising an intrinsic base region surrounded by an extrinsic base region, an emitter region of the second conductivity type formed inside the intrinsic base region, the extrinsic base region and the emitter region being contacted by a first polysilicon layer and a second polysilicon layer respectively. The first and the second polysilicon layers are respectively contacted by a base metal electrode and an emitter metal electrode. Between the extrinsic base region and the first polysilicon layer, a silicide layer is provided to reduce the extrinsic base resistance of the bipolar transistor.
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P.C. Hunt, "Bipolar Device Design for High Density High Performance Applications", IEDM 1989 p. 791-794.
D.L. Harame, et. al., "30 GHz Polysilicon-Emitter and Single-Crystal-Emitter Graded SiGe-Base PNP Transistors", International Electron Devices Meeting Technical Digest, Dec. 3-6, 1989, p. 90.33--90.36.
R. Dekker, et al., "Charge Sharing Effects in Bipolar Transistors with Sub-Halfmicron Emitter Widths", International Electron Devices Meeting Technical Digest, Dec. 9-12, 1990, p. 90.29--90.32.
Fallico Giuseppe
Zambrano Raffaele
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Saadat Mahshid
Wilson Allan R.
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