High-frequency bipolar transistor and method for the...

Details High-frequency bipolar transistor and method for the... High-frequency bipolar transistor and method for the...

2011-06-28

2011-06-28

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

C257SE29026, C257SE29174

Reexamination Certificate

active

07968972

ABSTRACT:
A high-frequency bipolar transistor includes an emitter contact adjoining an emitter connection region, a base contact adjoining a base connection region, and a collector contact adjoining a collector connection region. A first insulation layer is disposed on the base connection region. The collector connection region contains a buried layer, which connects the collector contact to a collector zone. A silicide or salicide region is provided on the buried layer and connects the collector contact to the collector zone in a low-impedance manner. A second insulation layer is disposed on the collector connection region but not on the silicide region.

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Japanese Office Action with English translation dated Mar. 1, 2011. No. 2006-500120.

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