High frequency arrangement

Details High frequency arrangement High frequency arrangement

2006-02-23

2009-10-20

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Transmission line lead

C257SE23057, C257S728000

Reexamination Certificate

active

07605450

ABSTRACT:
A high frequency arrangement is provided that includes an integrated high frequency circuit, a first bond pad, which is electrically connected by a first electrical supply line, in particular a bond wire and/or a solder bump, to a housing terminal and/or another circuit, wherein the first bond pad adjoins a dielectric so that the first bond pad forms a first capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, and the first capacitance and the first supply line, which has an inductance, influence a (tuned) first resonant frequency associated with the high-frequency circuit.

REFERENCES:
patent: 5338950 (1994-08-01), Bahl
patent: 5534727 (1996-07-01), Inoue
patent: 6107684 (2000-08-01), Busking et al.
patent: 7053435 (2006-05-01), Yeo et al.
patent: 7242153 (2007-07-01), Yu et al.
patent: 2002/0142512 (2002-10-01), Ma et al.
patent: 2003/0030589 (2003-02-01), Zurcher et al.
patent: 2003/0160274 (2003-08-01), Das et al.
patent: 0 930 653 (1999-07-01), None
patent: 0 969 509 (2000-01-01), None
patent: 1 182 703 (2002-02-01), None
patent: 4-61244 (1992-02-01), None
patent: 4-107940 (1992-04-01), None
patent: WO 98/13873 (1998-04-01), None

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