High-frequency amplifying semiconductor device

Details High-frequency amplifying semiconductor device High-frequency amplifying semiconductor device

1989-11-09

1991-06-04

Hille, Rolf

357 46, 357 47, 357 40, 357 41, 357 90, H01L 2702

Patent

active

050218590

ABSTRACT:
In a high-frequency amplifying semiconductor device in which a MOS field effect transistor and a bipolar transistor are formed within the same wafer and a source electrode of the MOS field effect transistor is connected to a lead frame by a bonding wire, use is made of a wafer for fabricating the MOS field effect transistor and the bipolar transistor, in which on a semiconductor substrate of P++ type is formed a first epitaxial layer of P or P- type, a buried layer of N+ type is formed in the first epitaxial layer of the first conductivity type and a second epitaxial layer of P type is formed on the buried layer and the first epitaxial layer. The use of such a wafer, which has no P- type Si substrate, allows the source resistance of the MOS field effect transistor to be decreased. The high-frequency amplifying semiconductor device is improved in high-frequency gain and NF.

REFERENCES:
patent: 4831430 (1989-05-01), Umeji
Richard S. Muller and Theodore I Kamins Device Electronics for Integrated Circuits J. Wiley 1986, pp. 33-35.
S. M. Sze Semiconductor Devices Physics and Technology J. Wiley 1985 p. 180.

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