High-frequency amplifier with high input impedance and high powe

Details High-frequency amplifier with high input impedance and high powe High-frequency amplifier with high input impedance and high powe

1996-12-05

1998-10-27

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including push-pull amplifier

330301, H03F 326

Patent

active

058282696

ABSTRACT:
A high-frequency power amplifier circuit offers the advantages of high input impedance, high power efficiency and accurate bias current control in a compact and economical circuit configuration. The amplifier includes a single-ended output stage driven by a symmetrical push-pull emitter follower stage with both active pull-down and active pull-up capability. The emitter follower stage is driven by an active phase-splitter stage, with bias current for the phase-splitter stage and subsequent stages being provided by a bias-current control stage which is isolated at high frequencies from the high-frequency input signal to the amplifier.

REFERENCES:
patent: 4442409 (1984-04-01), Preslar
patent: 5365198 (1994-11-01), Wong
patent: 5424686 (1995-06-01), Wong
"A 1 W 830MHz Monolithic BiCMOS Power Amplifier" by S.L. Wong et al, 1996 IEEE International Solid State Circuits Confererence, pp. 52-53.
"Variable Gain RF Predriver Amplifier", Oct. 21, 1996, Data Sheet, pp. 2-5.

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