High-frequency amplifier having variable gain in response to inp

Details High-frequency amplifier having variable gain in response to inp High-frequency amplifier having variable gain in response to inp

1996-02-21

1998-08-04

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330285, 330296, H03F 3193

Patent

active

057899835

ABSTRACT:
A semiconductor amplifier such as a high-frequency amplifier has a barrier-gate transistor FETQ1 and a circuit connected to the gate of the barrier-gate transistor FETQ1 for controlling an amplification gain of the barrier-gate transistor FETQ1. In one embodiment, the circuit has a resistor RG1 being connected between a GND line and the gate of the barrier-gate transistor FETQ1 and a resistor RG2 being connected between the gate of the barrier-gate transistor FETQ1 and a VGG line for biassing the gate of barrier-gate transistor FETQ1.

REFERENCES:
patent: 5371477 (1994-12-01), Ikeda et al.
patent: 5392004 (1995-02-01), Masliah

Affiliated with

Also associated with

Rating

High-frequency amplifier having variable gain in response to inp does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-frequency amplifier having variable gain in response to inp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency amplifier having variable gain in response to inp will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1181635