High frequency amplifier having a variable attenuator connected

Details High frequency amplifier having a variable attenuator connected High frequency amplifier having a variable attenuator connected

1998-03-13

2000-06-13

Shingleton, Michael B

Amplifiers

With semiconductor amplifying device

Including gain control means

330145, 330277, 330302, H03G 330

Patent

active

060754141

ABSTRACT:
The invention provides a high frequency amplifier in which a variable attenuator consisting of a bypass FET, which has a drain connected to a first-stage amplifying FET via a resistor, and a source grounded via a capacitor, is located on a main signal line leading to the gate of the amplifying FET, in order to control the gate potential of a bypass FET using a gain control voltage source, thereby varying the gain of the amplifier.

REFERENCES:
patent: 3480873 (1969-11-01), Carter
patent: 5699017 (1997-12-01), Maejima
patent: 5742206 (1998-04-01), Ishida
K. Miyatsuji, et al., A Low-Distortion GaAs Variable Attenuator IC For Digital Mobile Communication System, IEEE International Solid-State Circuits Conference, Feb. 15, 1995.
Masayuki Kimishima, et al., 1.9GHz Band Variable Gain Linear Amplifier MMIC, Lecture Paper C-83 of 1996 National Meeting of the Institue of Electronics, Information & Communications Engineers of Japan, Mar. 28, 1996.

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