High frequency amplifier circuit and mobile communication...

Amplifiers – With semiconductor amplifying device – Including gain control means

Reexamination Certificate

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Details

C330S306000, C455S232100, C455S234100

Reexamination Certificate

active

07626459

ABSTRACT:
A first FET is inserted in a series position between a signal input terminal and a signal output terminal, while second and third FETs are inserted in a shunt position respectively between the signal input terminal and a ground terminal and between the signal output terminal and a ground terminal. First and second reference voltage terminals and a control terminal are provided. A first reference voltage and a control voltage are applied to the first FET, while a second reference voltage and a control voltage are applied respectively to the second and third FETs, so that the first, second, and third FETs serve as variable resistors. As such, a gain control circuit is constructed. Further, a first resistor is provided in parallel to the first FET, while second and third resistors are provided respectively in series to the second and third FETs.

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European Search Report dated Mar. 14, 2006.
M. Inamori, et al., “A New GaAs Variable-Gain Amplifier MMIC with a Wide-Dynamic-Range and Low-Voltage-Operation Linear Attenuation Circuit”IEEE Transactions on Microwave Theory and Techniques, vol. 48, No. 2, pp. 182-186, Feb. 2000.
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Japanese Office Action dated May 9, 2006 with English translation.

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