Amplifiers – With semiconductor amplifying device – Including temperature compensation means
Reexamination Certificate
2007-07-17
2007-07-17
Lee, Benny (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including temperature compensation means
Reexamination Certificate
active
11062699
ABSTRACT:
A high frequency amplifier circuit has a bias supplying transistor for supplying a bias current to an amplifying transistor, and first and second temperature compensating transistors for compensating the temperature properties of the base voltage of the bias supplying transistor. The base of the bias supplying transistor and the base of the first temperature compensating transistor are connected by a resistor in order to keep the base voltage of the bias supplying transistor approximately constant without following a change in the base voltage of the first temperature compensating transistor, even in the case where such a change occurs. The temperature compensating transistors, the bias supplying transistor and the resistor are formed in one multi-emitter type transistor.
REFERENCES:
patent: 5150076 (1992-09-01), Asazawa
patent: 6437647 (2002-08-01), Fowler
patent: 6566954 (2003-05-01), Miyazawa
patent: 63281505 (1988-11-01), None
patent: 2002 009558 (2002-01-01), None
Japanese Office Action dated May 26, 2006 with English translation.
Lee Benny
Matsushita Electric - Industrial Co., Ltd.
Nguyen Hieu
Stevens Davis Miller & Mosher LLP
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