Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1984-04-27
1986-05-20
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330269, 330295, 330296, 330297, H03F 326, H03F 368
Patent
active
045904375
ABSTRACT:
High voltage, high frequency amplifier employing power transistors. The amplifier provides parallel ac signal amplification paths through each transistor and a single dc power path through the transistors in series. In one embodiment two FET's have their source electrodes connected to an input terminal and their drain electrodes connected to an output terminal so as to provide two parallel ac amplifying paths while blocking dc current flow. The drain electrode of the first FET is connected through an RF choke to source of dc operating potential, and its source electrode is connected through an RF choke to the drain electrode of the second FET. The gate electrode of the second FET is connected to ground. A single dc conductive path is thus provided between the source of operating potential and ground through the two FET's in series.
REFERENCES:
patent: 4342967 (1982-08-01), Regan et al.
Butler Scott J.
Regan Robert J.
Varallo Anthony B.
GTE Laboratories Incorporated
Keay David M.
Mullins James B.
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