Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1989-10-02
1991-01-22
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330277, H03F 316
Patent
active
049873849
ABSTRACT:
A high frequency amplifier including a field effect transistor as the amplifying element, includes an output detection section stripline for detecting the level of the output signal from the field effect transistor conducting main amplification, a pair of resistors connected between the both ends of the output detection section stripline and ground, a second field effect transistor to the gate of which a resistor from one end of the output detection section stripline is connected, the source or drain of the second field effect transistor being connected to the gate bias circuit of the main amplifying FET for controlling the drain current of the main amplifying FET in response to the output signal level of the main amplifying FET.
REFERENCES:
patent: 3965445 (1976-06-01), Ou
patent: 4504796 (1985-03-01), Igarashi
Mori Tetsuro
Yamanouchi Masahide
Mitsubishi Denki & Kabushiki Kaisha
Mottola Steven
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