Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Reexamination Certificate
2010-09-01
2011-12-27
Nguyen, Hieu (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
C330S307000
Reexamination Certificate
active
08085094
ABSTRACT:
A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD) component shunt-connected at a first end to the transmission line, a SMD component terminal connected to a second end of the SMD component and partially exposed at a back surface of the package substrate, and an external terminal partially exposed at the back surface of the package substrate and connected to a first end of the transmission line, opposite a second end of the transmission line that is connected to the amplifying active device.
REFERENCES:
patent: 6081694 (2000-06-01), Matsuura et al.
patent: 7656228 (2010-02-01), Fukuda et al.
patent: 7825731 (2010-11-01), Ohnishi et al.
patent: 9-186533 (1997-07-01), None
patent: 10-126173 (1998-05-01), None
patent: 11-127040 (1999-05-01), None
patent: 2008-113202 (2008-05-01), None
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
Nguyen Hieu
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